RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Elpida EBE21UE8ACUA-8G-E 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Compare
Elpida EBE21UE8ACUA-8G-E 2GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Overall score
Elpida EBE21UE8ACUA-8G-E 2GB
Overall score
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Elpida EBE21UE8ACUA-8G-E 2GB
Report a bug
Faster reading speed, GB/s
4
18.2
Average value in the tests
Faster write speed, GB/s
2,001.3
17.3
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
58
Around -123% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Elpida EBE21UE8ACUA-8G-E 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
26
Read speed, GB/s
4,796.5
18.2
Write speed, GB/s
2,001.3
17.3
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
768
3938
Elpida EBE21UE8ACUA-8G-E 2GB RAM comparisons
Kingston KVR800D2S6/4G 4GB
Corsair CMK64GX4M8X4133C19 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M378A1G43EB1-CRC 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Essencore Limited KD48GU481-26N1600 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C16-8GRS 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
Elpida EBE21UE8ACUA-8G-E 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M378A4G43AB2-CVF 32GB
Kingston 9905471-076.A00LF 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4DFS8213.C8FADP 4GB
SK Hynix HMA41GR7BJR4N-UH 8GB
Samsung M378A2K43CB1-CRC 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-2400C17-8GDBVR 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905624-025.A00G 8GB
Report a bug
×
Bug description
Source link