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Elpida EBE21UE8ACUA-8G-E 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Elpida EBE21UE8ACUA-8G-E 2GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB

总分
star star star star star
Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

总分
star star star star star
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

差异 规格 评论

差异

Elpida EBE21UE8ACUA-8G-E 2GB 需要考虑的原因
Elpida EBE21UE8ACUA-8G-E 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,001.3 left arrow 17.3
    测试中的平均数值
Chun Well Technology Holding Limited MD4U0840180BCW 8GB 需要考虑的原因
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 58
    左右 -123% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Elpida EBE21UE8ACUA-8G-E 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 26
  • 读取速度，GB/s
    4,796.5 left arrow 18.2
  • 写入速度，GB/s
    2,001.3 left arrow 17.3
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    768 left arrow 3938

Elpida EBE21UE8ACUA-8G-E 2GB RAM的比较

Kingston KVR800D2S6/4G 4GB
Corsair CMK64GX4M8X4133C19 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
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Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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