RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Elpida EBJ81UG8BBU0-GN-F 8GB
Shenzhen Technology Co Ltd 8GB
Compare
Elpida EBJ81UG8BBU0-GN-F 8GB vs Shenzhen Technology Co Ltd 8GB
Overall score
Elpida EBJ81UG8BBU0-GN-F 8GB
Overall score
Shenzhen Technology Co Ltd 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Elpida EBJ81UG8BBU0-GN-F 8GB
Report a bug
Reasons to consider
Shenzhen Technology Co Ltd 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
44
Around -38% lower latency
Faster reading speed, GB/s
15.9
13.2
Average value in the tests
Faster write speed, GB/s
11.9
9.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Elpida EBJ81UG8BBU0-GN-F 8GB
Shenzhen Technology Co Ltd 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
44
32
Read speed, GB/s
13.2
15.9
Write speed, GB/s
9.1
11.9
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2302
2831
Elpida EBJ81UG8BBU0-GN-F 8GB RAM comparisons
Kingston KVR16N11/8-SP 8GB
Elpida EBJ81UG8EFU0-GNL-F 8GB
Shenzhen Technology Co Ltd 8GB RAM comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBJ81UG8BBU0-GN-F 8GB
Shenzhen Technology Co Ltd 8GB
Samsung M378B5673EH1-CF8 2GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CMK8GX4M2D2666C16 4GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905702-135.A00G 8GB
Samsung M393B5170FH0-CK0 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMR32GX4M2A2666C16 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston ACR26D4U9S8HJ-8 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston 99U5428-063.A00LF 8GB
G Skill Intl F4-3333C16-8GVK 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Kingston KKN2NM-MIE 4GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2666C15-8GVR 8GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston KHX2666C16/8G 8GB
Report a bug
×
Bug description
Source link