RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-12800CL7-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Compare
G Skill Intl F3-12800CL7-4GBXM 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Overall score
G Skill Intl F3-12800CL7-4GBXM 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-12800CL7-4GBXM 4GB
Report a bug
Faster reading speed, GB/s
14.8
11.8
Average value in the tests
Faster write speed, GB/s
8.7
8.1
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
36
Around -16% lower latency
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-12800CL7-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
36
31
Read speed, GB/s
14.8
11.8
Write speed, GB/s
8.7
8.1
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2481
2354
G Skill Intl F3-12800CL7-4GBXM 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F3-19200CL9-4GBZMD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB RAM comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PUSKILL DDR3 1600 8G 8GB
Samsung M471A5143EB0-CPB 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
SK Hynix HMT41GS6MFR8C-PB 8GB
SK Hynix HMT41GS6MFR8C-PB 8GB
Kingston KF3200C16D4/16GX 16GB
Kingston KHX3200C16D4/16GX 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Samsung M378A1G43EB1-CRC 8GB
Unifosa Corporation HU564404EP0200 4GB
Corsair CMK32GX4M4Z3200C16 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-4266C17-16GVKB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston XK2M26-MIE 16GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9965745-002.A00G 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 99U5711-001.A00G 4GB
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
Samsung M391B5673EH1-CH9 2GB
AMD R9S48G3206U2S 8GB
Kingston 99U5428-040.A00LF 4GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905665-020.A00G 4GB
Report a bug
×
Bug description
Source link