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G Skill Intl F3-1600C11-4GIS 4GB
Samsung M393A2K40CB2-CTD 16GB

G Skill Intl F3-1600C11-4GIS 4GB vs Samsung M393A2K40CB2-CTD 16GB

Overall score
star star star star star
G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

Overall score
star star star star star
Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

Differences Specifications Comments

Differences

G Skill Intl F3-1600C11-4GIS 4GB Reasons to consider
G Skill Intl F3-1600C11-4GIS 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 52
    Around 33% lower latency
  • Faster reading speed, GB/s
    15.5 left arrow 10
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 7.3
    Average value in the tests
Samsung M393A2K40CB2-CTD 16GB Reasons to consider
Samsung M393A2K40CB2-CTD 16GB
Report a bug
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
G Skill Intl F3-1600C11-4GIS 4GB
Samsung M393A2K40CB2-CTD 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 52
  • Read speed, GB/s
    15.5 left arrow 10.0
  • Write speed, GB/s
    9.0 left arrow 7.3
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2405 left arrow 2306

G Skill Intl F3-1600C11-4GIS 4GB RAM comparisons

G Skill Intl F3-1600C11-4GISL 4GB
Essencore Limited KD48GS88J-26N1900 8GB

Samsung M393A2K40CB2-CTD 16GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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