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G Skill Intl F3-2666C12-8GTXD 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
G Skill Intl F3-2666C12-8GTXD 8GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
G Skill Intl F3-2666C12-8GTXD 8GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-2666C12-8GTXD 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
37
Around 24% lower latency
Faster reading speed, GB/s
18.2
16
Average value in the tests
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Faster write speed, GB/s
12.6
11.5
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-2666C12-8GTXD 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
37
Read speed, GB/s
18.2
16.0
Write speed, GB/s
11.5
12.6
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3067
2808
G Skill Intl F3-2666C12-8GTXD 8GB RAM comparisons
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C11-8GTXD 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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