RAM comparison G Skill Intl F3-2666C12-8GTXD 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F3-2666C12-8GTXD 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score

G Skill Intl F3-2666C12-8GTXD 8GB

Overall score

Differences Specifications Comments

Reasons to consider
G Skill Intl F3-2666C12-8GTXD 8GB

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Below the latency in the PassMark tests, ns

24 28

Around -17% lower latency
Faster write speed, GB/s

12.5 11.5

Average value in the tests
Higher memory bandwidth, mbps

19200 10600

Around 1.81 higher bandwidth

Complete list of technical specifications

G Skill Intl F3-2666C12-8GTXD 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

3067 2925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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