RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-2666C12-8GTXD 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Compare
G Skill Intl F3-2666C12-8GTXD 8GB vs Memphis Electronic D4SO1G724GI-A58SD 8GB
Overall score
G Skill Intl F3-2666C12-8GTXD 8GB
Overall score
Memphis Electronic D4SO1G724GI-A58SD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-2666C12-8GTXD 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
30
Around 7% lower latency
Faster reading speed, GB/s
18.2
11.7
Average value in the tests
Faster write speed, GB/s
11.5
6.6
Average value in the tests
Reasons to consider
Memphis Electronic D4SO1G724GI-A58SD 8GB
Report a bug
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-2666C12-8GTXD 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
30
Read speed, GB/s
18.2
11.7
Write speed, GB/s
11.5
6.6
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3067
1832
G Skill Intl F3-2666C12-8GTXD 8GB RAM comparisons
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C11-8GTXD 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F2-5300CL4-1GBSA 1GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CM4B8G1J2400A16K2-ON 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Kingston 99P5471-002.A00LF 2GB
Corsair CMK64GX4M8A2666C16 8GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston MSI21D4S15HAG/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix HMA81GR7AFR8N-VK 8GB
SK Hynix DDR2 800 2G 2GB
Corsair CMW32GX4M2D3000C16 16GB
Swissbit MEU25664D6BC2EP-30 2GB
Corsair CMK64GX4M2A2666C16 32GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-4000C17-16GTRGB 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMK16GX4M2K4133C19 8GB
Kingston 9905471-001.A01LF 2GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
Asgard VMA45UG-MEC1U2AW1 8GB
G Skill Intl F4-3600C19-8GSXKB 8GB
Samsung M471B5773DH0-CK0 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Report a bug
×
Bug description
Source link