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G Skill Intl F3-2800C12-8GTXDG 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Overall score
star star star star star
G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Differences Specifications Comments

Differences

G Skill Intl F3-2800C12-8GTXDG 8GB Reasons to consider
G Skill Intl F3-2800C12-8GTXDG 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    21 left arrow 25
    Around 16% lower latency
  • Faster reading speed, GB/s
    17.4 left arrow 15.3
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
Report a bug
  • Faster write speed, GB/s
    12.7 left arrow 12.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications
G Skill Intl F3-2800C12-8GTXDG 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    21 left arrow 25
  • Read speed, GB/s
    17.4 left arrow 15.3
  • Write speed, GB/s
    12.2 left arrow 12.7
  • Memory bandwidth, mbps
    10600 left arrow 21300
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    3130 left arrow 2704

G Skill Intl F3-2800C12-8GTXDG 8GB RAM comparisons

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