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Micron Technology 16KTF1G64AZ-1G6E1 8GB
Samsung M378B1G73DB0-CK0 8GB

Micron Technology 16KTF1G64AZ-1G6E1 8GB vs Samsung M378B1G73DB0-CK0 8GB

Overall score
star star star star star
Micron Technology 16KTF1G64AZ-1G6E1 8GB

Micron Technology 16KTF1G64AZ-1G6E1 8GB

Overall score
star star star star star
Samsung M378B1G73DB0-CK0 8GB

Samsung M378B1G73DB0-CK0 8GB

Differences Specifications Comments

Differences

Micron Technology 16KTF1G64AZ-1G6E1 8GB Reasons to consider
Micron Technology 16KTF1G64AZ-1G6E1 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    40 left arrow 42
    Around 5% lower latency
Samsung M378B1G73DB0-CK0 8GB Reasons to consider
Samsung M378B1G73DB0-CK0 8GB
Report a bug
  • Faster reading speed, GB/s
    13.5 left arrow 13.3
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 8.2
    Average value in the tests

Specifications

Complete list of technical specifications
Micron Technology 16KTF1G64AZ-1G6E1 8GB
Samsung M378B1G73DB0-CK0 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    40 left arrow 42
  • Read speed, GB/s
    13.3 left arrow 13.5
  • Write speed, GB/s
    8.2 left arrow 8.7
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2288 left arrow 2348

Micron Technology 16KTF1G64AZ-1G6E1 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
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Samsung M378B1G73DB0-CK0 8GB RAM comparisons

Patriot Memory (PDP Systems) PSD38G16002 8GB
Samsung M378B1G73EB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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