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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Micron Technology 16KTF1G64AZ-1G6E1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs Micron Technology 16KTF1G64AZ-1G6E1 8GB

Overall score
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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Overall score
star star star star star
Micron Technology 16KTF1G64AZ-1G6E1 8GB

Micron Technology 16KTF1G64AZ-1G6E1 8GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 40
    Around 25% lower latency
Micron Technology 16KTF1G64AZ-1G6E1 8GB Reasons to consider
Micron Technology 16KTF1G64AZ-1G6E1 8GB
Report a bug
  • Faster reading speed, GB/s
    13.3 left arrow 8.8
    Average value in the tests
  • Faster write speed, GB/s
    8.2 left arrow 5.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Micron Technology 16KTF1G64AZ-1G6E1 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    30 left arrow 40
  • Read speed, GB/s
    8.8 left arrow 13.3
  • Write speed, GB/s
    5.6 left arrow 8.2
  • Memory bandwidth, mbps
    10600 left arrow 12800
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    1344 left arrow 2288

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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