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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Micron Technology 16KTF1G64AZ-1G6E1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs Micron Technology 16KTF1G64AZ-1G6E1 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

总分
star star star star star
Micron Technology 16KTF1G64AZ-1G6E1 8GB

Micron Technology 16KTF1G64AZ-1G6E1 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 40
    左右 25% 更低的延时
Micron Technology 16KTF1G64AZ-1G6E1 8GB 需要考虑的原因
Micron Technology 16KTF1G64AZ-1G6E1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.3 left arrow 8.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.2 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Micron Technology 16KTF1G64AZ-1G6E1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    30 left arrow 40
  • 读取速度，GB/s
    8.8 left arrow 13.3
  • 写入速度，GB/s
    5.6 left arrow 8.2
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1344 left arrow 2288

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB

Micron Technology 16KTF1G64AZ-1G6E1 8GB RAM的比较

AMD R538G1601S2LS 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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