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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Micron Technology 16KTF1G64AZ-1G6E1 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs Micron Technology 16KTF1G64AZ-1G6E1 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Overall score
Micron Technology 16KTF1G64AZ-1G6E1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Report a bug
Below the latency in the PassMark tests, ns
30
40
Around 25% lower latency
Reasons to consider
Micron Technology 16KTF1G64AZ-1G6E1 8GB
Report a bug
Faster reading speed, GB/s
13.3
8.8
Average value in the tests
Faster write speed, GB/s
8.2
5.6
Average value in the tests
Higher memory bandwidth, mbps
12800
10600
Around 1.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Micron Technology 16KTF1G64AZ-1G6E1 8GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
30
40
Read speed, GB/s
8.8
13.3
Write speed, GB/s
5.6
8.2
Memory bandwidth, mbps
10600
12800
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
7-7-7-20 / 1333 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
1344
2288
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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calculate
Absolute Latency
0 ns
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