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G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Compare
G Skill Intl F4-4000C14-16GTZR 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Overall score
G Skill Intl F4-4000C14-16GTZR 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F4-4000C14-16GTZR 16GB
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Faster reading speed, GB/s
24
12.2
Average value in the tests
Faster write speed, GB/s
20.0
9.6
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Report a bug
Specifications
Complete list of technical specifications
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
29
29
Read speed, GB/s
24.0
12.2
Write speed, GB/s
20.0
9.6
Memory bandwidth, mbps
17000
17000
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
4156
2443
G Skill Intl F4-4000C14-16GTZR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM comparisons
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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