G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

G Skill Intl F4-4000C14-16GTZR 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Overall score
star star star star star
G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Differences

  • Below the latency in the PassMark tests, ns
    29 left arrow 45
    Around 36% lower latency
  • Faster reading speed, GB/s
    24 left arrow 6.9
    Average value in the tests
  • Faster write speed, GB/s
    20.0 left arrow 6.3
    Average value in the tests

Specifications

Complete list of technical specifications
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    29 left arrow 45
  • Read speed, GB/s
    24.0 left arrow 6.9
  • Write speed, GB/s
    20.0 left arrow 6.3
  • Memory bandwidth, mbps
    17000 left arrow 17000
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, TBD2 V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    4156 left arrow 1499
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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