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Hexon Technology Pte Ltd HEXON 1GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hexon Technology Pte Ltd HEXON 1GB vs Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Overall score
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Overall score
star star star star star
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Differences Specifications Comments

Differences

Hexon Technology Pte Ltd HEXON 1GB Reasons to consider
Hexon Technology Pte Ltd HEXON 1GB
Report a bug
  • Below the latency in the PassMark tests, ns
    62 left arrow 77
    Around 19% lower latency
  • Faster reading speed, GB/s
    3 left arrow 13.1
    Average value in the tests
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB Reasons to consider
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Report a bug
  • Faster write speed, GB/s
    5.5 left arrow 1,843.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    62 left arrow 77
  • Read speed, GB/s
    3,556.6 left arrow 13.1
  • Write speed, GB/s
    1,843.6 left arrow 5.5
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    542 left arrow 1440

Hexon Technology Pte Ltd HEXON 1GB RAM comparisons

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Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB RAM comparisons

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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RAM Latency Calculator
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