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Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Compare
Hexon Technology Pte Ltd HEXON 1GB vs Micron Technology 4ATF51264HZ-2G3E1 4GB
Overall score
Hexon Technology Pte Ltd HEXON 1GB
Overall score
Micron Technology 4ATF51264HZ-2G3E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hexon Technology Pte Ltd HEXON 1GB
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Faster reading speed, GB/s
3
14.8
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264HZ-2G3E1 4GB
Report a bug
Below the latency in the PassMark tests, ns
27
62
Around -130% lower latency
Faster write speed, GB/s
10.2
1,843.6
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
62
27
Read speed, GB/s
3,556.6
14.8
Write speed, GB/s
1,843.6
10.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
542
2173
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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