RAM comparison Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Samsung V-GeN D4S4GL30A16TS5 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Samsung V-GeN D4S4GL30A16TS5 4GB

Overall score

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Below the latency in the PassMark tests, ns

27 62

Around 56% lower latency
Faster write speed, GB/s

11.8 7.0

Average value in the tests
Higher memory bandwidth, mbps

21300 19200

Around 1.11% higher bandwidth

Reasons to consider
Samsung V-GeN D4S4GL30A16TS5 4GB

Complete list of technical specifications

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Main characteristics

Other

Description

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2756 1808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns