RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
V-GEN D4H8GL36A8TXV 8GB
Compare
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs V-GEN D4H8GL36A8TXV 8GB
Overall score
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Overall score
V-GEN D4H8GL36A8TXV 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
53
Around 49% lower latency
Faster write speed, GB/s
11.8
9.4
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
V-GEN D4H8GL36A8TXV 8GB
Report a bug
Faster reading speed, GB/s
20
16.7
Average value in the tests
Specifications
Complete list of technical specifications
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
V-GEN D4H8GL36A8TXV 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
27
53
Read speed, GB/s
16.7
20.0
Write speed, GB/s
11.8
9.4
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2756
2366
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM comparisons
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
V-GEN D4H8GL36A8TXV 8GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3600C17-16GTZSW 16GB
Avant Technology F6451U64F9333G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Samsung DDR3 8GB 1600MHz 8GB
Samsung M378A2K43DB1-CVF 16GB
Kingston 99U5469-045.A00LF 4GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
SK Hynix HYMP125S64CP8-S6 2GB
Kingston 9905712-009.A00G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMWX16GC3200C16W4 16GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905678-065.A00G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Micron Technology AFLD44EK2P 4GB
Kingston 99U5474-025.A00LF 2GB
Samsung M378B5773CH0-CH9 2GB
Kingston 9905471-001.A01LF 2GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KMKYF9-MID 8GB
Report a bug
×
Bug description
Source link