RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Kingston 9965596-019.B01G 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Kingston 9965596-019.B01G 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Overall score
Kingston 9965596-019.B01G 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
39
Around 13% lower latency
Faster reading speed, GB/s
8.6
7.6
Average value in the tests
Reasons to consider
Kingston 9965596-019.B01G 4GB
Report a bug
Faster write speed, GB/s
7.2
5.8
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Kingston 9965596-019.B01G 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
34
39
Read speed, GB/s
8.6
7.6
Write speed, GB/s
5.8
7.2
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1682
1868
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB
Kingston 99P5723-006.A00G 8GB
Kingston 9965596-019.B01G 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CMSX4GX3M1A1600C9 4GB
Transcend Information TS2GLH64V6B 16GB
Samsung M471B5273EB0-CK0 4GB
Samsung M378A1K43BB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Kingston 9965596-019.B01G 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-8GTRS 8GB
Kingston 9905471-071.A00LF 8GB
Crucial Technology CT16G4SFD824A.M16FD 16GB
Samsung M378B5273EB0-CK0 4GB
Mushkin MRA4S320GJJM32G 32GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
PNY Electronics PNY 2GB
Avant Technology W641GU42J5213NC 8GB
Micron Technology 16KTF51264HZ-1G6M1 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3600C16-8GTZSW 8GB
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMA82GS7AFR8N-UH 16GB
Samsung 1600 CL10 Series 8GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
Samsung 1600 CL10 Series 8GB
Transcend Information TS1GSH64V4B 8GB
Report a bug
×
Bug description
Source link