RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-2666C19-8GSXK 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs G Skill Intl F4-2666C19-8GSXK 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
G Skill Intl F4-2666C19-8GSXK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Reasons to consider
G Skill Intl F4-2666C19-8GSXK 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
28
Around -27% lower latency
Faster reading speed, GB/s
18.4
12.4
Average value in the tests
Faster write speed, GB/s
13.6
9.6
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-2666C19-8GSXK 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
22
Read speed, GB/s
12.4
18.4
Write speed, GB/s
9.6
13.6
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2329
3222
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
G Skill Intl F4-2666C19-8GSXK 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273DH0-CH9 4GB
Kingston 9905625-142.A00G 16GB
A-DATA Technology VDQVE1B16 2GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M471A5244BB0-CRC 4GB
Kingston 99U5428-040.A00LF 4GB
Kingston KHX3200C16D4/4GX 4GB
PNY Electronics PNY 2GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Samsung M471B5273CH0-CH9 4GB
Avant Technology J641GU49J2320NE 8GB
Kingston 99U5584-007.A00LF 4GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
EVGA 8GX-D4-2800-MR 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMK16GX4M2K4133C19 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston XN205T-MIE2 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMD32GX4M4A2666C15 8GB
Kingston KF3200C16D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB
A-DATA Technology DQVE1908 512MB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
Report a bug
×
Bug description
Source link