RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-4400C18-8GTRS 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs G Skill Intl F4-4400C18-8GTRS 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
G Skill Intl F4-4400C18-8GTRS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Reasons to consider
G Skill Intl F4-4400C18-8GTRS 8GB
Report a bug
Below the latency in the PassMark tests, ns
17
28
Around -65% lower latency
Faster reading speed, GB/s
21.1
12.4
Average value in the tests
Faster write speed, GB/s
19.6
9.6
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-4400C18-8GTRS 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
17
Read speed, GB/s
12.4
21.1
Write speed, GB/s
9.6
19.6
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2329
3829
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
G Skill Intl F4-4400C18-8GTRS 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-4400C18-8GTRS 8GB
Samsung M391B5673EH1-CH9 2GB
Panram International Corporation PUD42133C158G2VS 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
Kingston KNWMX1-ETB 4GB
Netac Technology Co Ltd E40832A 8GB
Samsung M3 78T6553CZ3-CD5 512MB
King Tiger Technology Tigo-2133Mhz-8G 8GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905678-014.A00G 4GB
Kingston 9965516-430.A00G 16GB
G Skill Intl F4-3333C16-8GVR 8GB
Corsair CM2X1024-8500C5D 1GB
Samsung 9905599-020.A00G 16GB
Kingston 99U5584-004.A00LF 4GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
Protocol Engines Kingrock 800 2GB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
Samsung M378B5273CH0-CH9 4GB
Ramaxel Technology RMUA5180MH78HBF-2666 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Panram International Corporation PUD42400C168GVS 8GB
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3200C15-8GTZKW 8GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9965640-015.A00G 32GB
Report a bug
×
Bug description
Source link