RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Micron Technology 36ASF2G72PZ-2G4AT 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
36
Around 22% lower latency
Faster reading speed, GB/s
12.4
9.8
Average value in the tests
Faster write speed, GB/s
9.6
7.2
Average value in the tests
Reasons to consider
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Report a bug
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
36
Read speed, GB/s
12.4
9.8
Write speed, GB/s
9.6
7.2
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2329
2220
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
takeMS International AG TMS2GB264D082-805G 2GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-3200C15-16GVK 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CMK32GX4M4E4133C19 8GB
SpecTek Incorporated PSD34G13332 4GB
Kingston 9965662-015.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Kllisre M393B1K70DH0-CK0 8GB
V-Color Technology Inc. TL48G26S8KRRGB16 8GB
Team Group Inc. Vulcan-1600 4GB
Golden Empire CL15-17-17 D4-3200 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Crucial Technology CT8G4SFD8213.C16FHP 8GB
Samsung M471B5773DH0-CH9 2GB
Kingston 9965600-033.A00G 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9965662-004.A00G 16GB
Kingston KHX3200C18D4/8G 8GB
Gloway International (HK) STK2400C15-16GB 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3200C14-16GFX 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Report a bug
×
Bug description
Source link