RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Panram International Corporation W4N2400PS-8G 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Panram International Corporation W4N2400PS-8G 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Panram International Corporation W4N2400PS-8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Reasons to consider
Panram International Corporation W4N2400PS-8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
28
Around -22% lower latency
Faster reading speed, GB/s
16.6
12.4
Average value in the tests
Faster write speed, GB/s
12.9
9.6
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Panram International Corporation W4N2400PS-8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
23
Read speed, GB/s
12.4
16.6
Write speed, GB/s
9.6
12.9
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2329
2825
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Panram International Corporation W4N2400PS-8G 8GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
Samsung M471B1G73DB0-YK0 8GB
Kingston HP37D4U1S8ME-16XR 16GB
Team Group Inc. Vulcan-1600 4GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
A-DATA Technology DQVE1908 512MB
SK Hynix HMA81GS6CJRJR-VK 8GB
Samsung M393B1G70BH0-YK0 8GB
SK Hynix HMA82GS6CJR8N-XN 16GB
Kingston 99U5428-046.A00LF 4GB
G Skill Intl F4-3200C14-16GVK 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Smart Modular SF464128CK8I6GKSEG 4GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston KHX3600C17D4/16GX 16GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Kingston 9905703-008.A00G 16GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3000C15-4GRK 4GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3800C14-8GTZN 8GB
Report a bug
×
Bug description
Source link