RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Overall score
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
30
Around 3% lower latency
Reasons to consider
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Report a bug
Faster reading speed, GB/s
22.2
12.1
Average value in the tests
Faster write speed, GB/s
17.1
7.8
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
30
Read speed, GB/s
12.1
22.2
Write speed, GB/s
7.8
17.1
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2177
3871
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM comparisons
G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB RAM comparisons
Crucial Technology BLT16G4D30AETA.K16FB 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-14900CL8-4GBXM 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Ramaxel Technology RMSA3330ME88HCF-3200 32GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3000C14-16GVK 16GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston KF2933C17S4/16G 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BL32G32C16U4BL.M16FB 32GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Avant Technology W641GU42J5213N3 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Essencore Limited IM48GU48A30-GIIHM 8GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Avant Technology J641GU42J9266NL 8GB
Samsung M393B1K70CH0-CH9 8GB
Mushkin 99[2/7/4]209F 8GB
Kingston KHX2400C11D3/4GX 4GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Report a bug
×
Bug description
Source link