RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Overall score
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Report a bug
Reasons to consider
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
29
Around -32% lower latency
Faster reading speed, GB/s
18.1
12.1
Average value in the tests
Faster write speed, GB/s
13.5
7.8
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
22
Read speed, GB/s
12.1
18.1
Write speed, GB/s
7.8
13.5
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2177
3172
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM comparisons
G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Smart Modular SF4722G4CKHH6DFSDS 16GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Samsung M378A2K43DB1-CTD 16GB
Samsung 1600 CL10 Series 8GB
Corsair CMT32GX4M2C3600C18 16GB
Samsung M471B1G73EB0-YK0 8GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
G Skill Intl F5-5600J4040C16G 16GB
Corsair CMK4GX4M1A2400C14 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905712-016.A00G 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Essencore Limited KD44GU480-26N160T 4GB
Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M378B5173CB0-CK0 4GB
Samsung M378B1G73DB0-CK0 8GB
Kingston 9905458-017.A01LF 4GB
Corsair CMD16GX4M4B3600C18 4GB
Crucial Technology CT102464BF160B-16F 8GB
Kingston 9905625-098.A00G 16GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
Report a bug
×
Bug description
Source link