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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung V-GeN D4S8GL24A8 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Samsung V-GeN D4S8GL24A8 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Samsung V-GeN D4S8GL24A8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
73
Around 60% lower latency
Faster write speed, GB/s
9.0
7.1
Average value in the tests
Reasons to consider
Samsung V-GeN D4S8GL24A8 8GB
Report a bug
Faster reading speed, GB/s
14.1
13.4
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung V-GeN D4S8GL24A8 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
73
Read speed, GB/s
13.4
14.1
Write speed, GB/s
9.0
7.1
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2423
1609
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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