RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
62
Around -170% lower latency
Faster reading speed, GB/s
16.7
7.4
Average value in the tests
Faster write speed, GB/s
13.2
5.9
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
23
Read speed, GB/s
7.4
16.7
Write speed, GB/s
5.9
13.2
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 12 14 15
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1612
3025
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB RAM comparisons
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73DB0-YK0 8GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMW16GX4M2C3200C16 8GB
AMD AE34G1601U1 4GB
Kingston 9965589-006.E00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905678-024.A00G 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Kingston 9905458-017.A01LF 4GB
Kingston 9905700-072.A01G 16GB
Kingston 99U5474-028.A00LF 4GB
Corsair CM4X8GD3200C16K2E 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Avant Technology W641GU48J7240ND 8GB
Kingston 9905403-011.A03LF 2GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Kingston 9905783-025.A01G 16GB
Kingston HX318C10FK/4 4GB
G Skill Intl F4-3600C19-16GSXWB 16GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Team Group Inc. Team-Elite-1333 4GB
Samsung M471A2K43EB1-CTD 16GB
Report a bug
×
Bug description
Source link