RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
G Skill Intl F4-4400C19-32GTZR 32GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs G Skill Intl F4-4400C19-32GTZR 32GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
G Skill Intl F4-4400C19-32GTZR 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
G Skill Intl F4-4400C19-32GTZR 32GB
Report a bug
Below the latency in the PassMark tests, ns
29
62
Around -114% lower latency
Faster reading speed, GB/s
23.4
7.4
Average value in the tests
Faster write speed, GB/s
18.3
5.9
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
G Skill Intl F4-4400C19-32GTZR 32GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
29
Read speed, GB/s
7.4
23.4
Write speed, GB/s
5.9
18.3
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1612
4208
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
G Skill Intl F4-4400C19-32GTZR 32GB RAM comparisons
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3200C15-8GTZSW 8GB
Corsair CMX4GX3M1A1333C9 4GB
Apacer Technology 78.CAGP7.4020B 8GB
Corsair CMX4GX3M2A1600C9 2GB
Kingston KHX3000C15/16GX 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M471A1K43BB1-CTD 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-4400C19-32GTZR 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-4133C19-8GTZC 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A2K43BB1-CTD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C16-4GFX 4GB
Hexon Technology Pte Ltd HEXON 1GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Mushkin MR[ABC]4U320GJJM8G 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
Report a bug
×
Bug description
Source link