RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Micron Technology 16ATF2G64HZ-2G6E3 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Report a bug
Below the latency in the PassMark tests, ns
34
62
Around -82% lower latency
Faster reading speed, GB/s
15.8
7.4
Average value in the tests
Faster write speed, GB/s
12.4
5.9
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
34
Read speed, GB/s
7.4
15.8
Write speed, GB/s
5.9
12.4
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1612
2902
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KF073F-ELF 2GB
Samsung M471B5273DH0-CH9 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
Crucial Technology CT102464BF160B-16F 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Apacer Technology 78.CAGNT.4050B 8GB
Kingston 9905403-444.A00LF 4GB
Essencore Limited IM48GU48N21-FFFHM 8GB
Kingston 9905403-061.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
SK Hynix HMT425S6CFR6A-PB 2GB
G Skill Intl F4-4000C19-16GTRS 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-3600C15-8GTZ 8GB
Samsung 1600 CL10 Series 8GB
Ramaxel Technology RMUA5090KE68H9F2133 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston KHX3200C18D4/16G 16GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Apacer Technology D12.2326WH.001 16GB
Samsung M393B5170FH0-CK0 4GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Report a bug
×
Bug description
Source link