RAM comparison Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M378A1G44AB0-CWE 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M378A1G44AB0-CWE 8GB

Overall score

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Reasons to consider
Samsung M378A1G44AB0-CWE 8GB

Below the latency in the PassMark tests, ns

38 62

Around -63% lower latency
Faster reading speed, GB/s

16.5 7.4

Average value in the tests
Faster write speed, GB/s

10.9 5.9

Average value in the tests
Higher memory bandwidth, mbps

25600 10600

Around 2.42 higher bandwidth

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Samsung M378A1G44AB0-CWE 8GB

Main characteristics

Other

Description

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

1612 2829

RAM Latency Calculator

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RAM 1

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RAM 2

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