RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Transcend Information TS512MLH64V4H 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Transcend Information TS512MLH64V4H 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Overall score
Transcend Information TS512MLH64V4H 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Report a bug
Reasons to consider
Transcend Information TS512MLH64V4H 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
28
Around -22% lower latency
Faster reading speed, GB/s
16.6
10.9
Average value in the tests
Faster write speed, GB/s
13.0
7.1
Average value in the tests
Higher memory bandwidth, mbps
19200
8500
Around 2.26 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Transcend Information TS512MLH64V4H 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
23
Read speed, GB/s
10.9
16.6
Write speed, GB/s
7.1
13.0
Memory bandwidth, mbps
8500
19200
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1668
2548
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB RAM comparisons
SK Hynix HMT351S6AFR8C-G7 4GB
Corsair CMK16GX4M4B3200C16 4GB
Transcend Information TS512MLH64V4H 4GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C15-16GTZKW 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KYXC0V-MIB 16GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Transcend Information TS512MLH64V4H 4GB
SK Hynix HYMP112U64CP8-S6 1GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMK8GX4M2B4266C19 4GB
AMD AE34G1601U1 4GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Samsung 1600 CL10 Series 8GB
Corsair CMD32GX4M4B3733C17 8GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Kingston HX318C10FK/4 4GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3600C17-16GTZR 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Samsung M378A5143EB1-CPB 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BL8G24C16U4B.8FB 8GB
Report a bug
×
Bug description
Source link