RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3200C16-16GTZR 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-3200C16-16GTZR 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
G Skill Intl F4-3200C16-16GTZR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
18.4
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C16-16GTZR 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
65
Around -117% lower latency
Faster write speed, GB/s
14.8
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3200C16-16GTZR 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
30
Read speed, GB/s
3,580.8
18.4
Write speed, GB/s
1,592.0
14.8
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
572
3657
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-3200C16-16GTZR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3200C16-16GTZR 16GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology CB8GS2400.C8JT 8GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-3200C16-8GVGB 8GB
Kingston 99U5584-001.A00LF 4GB
Crucial Technology CT8G4DFD8213.C16FBD1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CMWX8GF2933Z19W8 8GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
Samsung M471B5773DH0-CH9 2GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
Apacer Technology 78.A1GC6.9LZ 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology AM1P26KCST2-BABS 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2666C18-8GRS 8GB
Kingston 9905471-006.A01LF 4GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
Nanya Technology NT2GT64U8HD0BN-AD 2GB
A-DATA Technology AD4S320038G22-B 8GB
Corsair CML16GX3M2A1600C10 8GB
Kingston KHX3466C19D4/16G 16GB
Report a bug
×
Bug description
Source link