RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-3600C16-8GTZRC 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
G Skill Intl F4-3600C16-8GTZRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
18.1
Average value in the tests
Reasons to consider
G Skill Intl F4-3600C16-8GTZRC 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
65
Around -141% lower latency
Faster write speed, GB/s
16.0
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
27
Read speed, GB/s
3,580.8
18.1
Write speed, GB/s
1,592.0
16.0
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
572
3672
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3600C16-8GTZRC 8GB
Kingston 99P5474-014.A00LF 4GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
Samsung M393B2G70BH0-CH9 16GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
A-DATA Technology 11137401 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMW64GX4M4Z2933C16 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-4000C18-8GTRS 8GB
Kingston 99U5474-013.A00LF 2GB
Avant Technology W6451U67J5213NB 4GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMK16GX4M4C3000C16 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Mushkin 99[2/7/4]197F 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Report a bug
×
Bug description
Source link