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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-3600C16-8GTZRC 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分
star star star star star
G Skill Intl F4-3600C16-8GTZRC 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.1
    测试中的平均数值
G Skill Intl F4-3600C16-8GTZRC 8GB 需要考虑的原因
G Skill Intl F4-3600C16-8GTZRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 65
    左右 -141% 更低的延时
  • 更快的写入速度，GB/s
    16.0 left arrow 1,592.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 27
  • 读取速度，GB/s
    3,580.8 left arrow 18.1
  • 写入速度，GB/s
    1,592.0 left arrow 16.0
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    572 left arrow 3672

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较

Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB

G Skill Intl F4-3600C16-8GTZRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CMK32GX4M4B3200C16 8GB
Corsair CMK32GX4M4B3200C16 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR32D4S2S1ME-8 8GB
Kingston ACR32D4S2S1ME-8 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK16GX4M2D2400C14 8GB
Corsair CMK16GX4M2D2400C14 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMU32GX4M4A2666C16 8GB
Corsair CMU32GX4M4A2666C16 8GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Corsair CMT64GX4M8C3200C16 8GB
Corsair CMT64GX4M8C3200C16 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMK128GX4M8X3600C18 16GB
Corsair CMK128GX4M8X3600C18 16GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CM4X8GF2400C16S4 8GB
Corsair CM4X8GF2400C16S4 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMV16GX4M1L2400C16 16GB
Corsair CMV16GX4M1L2400C16 16GB
内存RAM