RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-4200C19-4GTZ 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-4200C19-4GTZ 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
G Skill Intl F4-4200C19-4GTZ 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Below the latency in the PassMark tests, ns
65
75
Around 13% lower latency
Faster reading speed, GB/s
3
14.5
Average value in the tests
Reasons to consider
G Skill Intl F4-4200C19-4GTZ 4GB
Report a bug
Faster write speed, GB/s
7.6
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-4200C19-4GTZ 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
75
Read speed, GB/s
3,580.8
14.5
Write speed, GB/s
1,592.0
7.6
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
572
1735
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-4200C19-4GTZ 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3600C18-32GVK 32GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-4200C19-4GTZ 4GB
Samsung M393B1K70CH0-YH9 8GB
Corsair CMK64GX4M4A2133C13 16GB
Kingston KHX8500D2K2/2GN 1GB
G Skill Intl F4-4266C19-8GTRG 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3333C16-16GTZB 16GB
Kingston KHX318C10FR/8G 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston 9905663-016.A00G 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
Strontium EVMT8G1600U86S 8GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Kingston 99U5471-020.A00LF 4GB
Corsair CMU32GX4M2D3200C16 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLS8G4D240FSB.16FBD2 8GB
Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-2666C15-8GVK 8GB
Kingston KHX2133C11D3/4GX 4GB
Kingston 9905712-035.A00G 16GB
Report a bug
×
Bug description
Source link