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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 20.1
    Average value in the tests
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    56 left arrow 65
    Around -16% lower latency
  • Faster write speed, GB/s
    10.5 left arrow 1,592.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    65 left arrow 56
  • Read speed, GB/s
    3,580.8 left arrow 20.1
  • Write speed, GB/s
    1,592.0 left arrow 10.5
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    572 left arrow 2455

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons

Samsung M471B5773DH0-CK0 2GB
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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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