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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Below the latency in the PassMark tests, ns
24
27
Around 11% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
Report a bug
Faster reading speed, GB/s
19.1
16
Average value in the tests
Faster write speed, GB/s
16.2
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
27
Read speed, GB/s
16.0
19.1
Write speed, GB/s
12.5
16.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3784
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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