RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMK256GX4M8A2400C16 32GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMK256GX4M8A2400C16 32GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CMK256GX4M8A2400C16 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
50
Around 52% lower latency
Faster reading speed, GB/s
16
13.2
Average value in the tests
Reasons to consider
Corsair CMK256GX4M8A2400C16 32GB
Report a bug
Faster write speed, GB/s
12.7
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMK256GX4M8A2400C16 32GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
50
Read speed, GB/s
16.0
13.2
Write speed, GB/s
12.5
12.7
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2549
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CMK256GX4M8A2400C16 32GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-4133C19-8GTZR 8GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix MMA82GS6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK256GX4M8A2400C16 32GB
A-DATA Technology DDR3 1866 2OZ 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Samsung M3 93T5750CZA-CE6 2GB
Transcend Information TS1GLH64V4B 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology CT16G4SFRA266.C8FB 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Kingston 9905471-001.A01LF 2GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
Mushkin 991586 2GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905743-045.A00G 16GB
Report a bug
×
Bug description
Source link