RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMSX32GX4M2A2666C18 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMSX32GX4M2A2666C18 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CMSX32GX4M2A2666C18 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
38
Around 37% lower latency
Faster reading speed, GB/s
16
15.2
Average value in the tests
Reasons to consider
Corsair CMSX32GX4M2A2666C18 16GB
Report a bug
Faster write speed, GB/s
13.1
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMSX32GX4M2A2666C18 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
38
Read speed, GB/s
16.0
15.2
Write speed, GB/s
12.5
13.1
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2892
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CMSX32GX4M2A2666C18 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-2133C15-4GVK 4GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Kingston 99U5403-465.A00LF 8GB
Corsair CMW256GX4M8E3200C16 32GB
Samsung M378B5173BH0-CH9 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
Kingston 9965662-016.A00G 16GB
Apacer Technology 78.B1GN3.4032B 4GB
AMD R5S38G1601U2S 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Samsung M393B5170FH0-CH9 4GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3000C15-8GVRB 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Samsung M391B5673FH0-CH9 2GB
Samsung M471A1A43DB0-CPB 8GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
SK Hynix HMA82GS6CJR8N-VK 16GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Report a bug
×
Bug description
Source link