RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMW256GX4M8E3200C16 32GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMW256GX4M8E3200C16 32GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CMW256GX4M8E3200C16 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
55
Around 56% lower latency
Faster reading speed, GB/s
16
12.3
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Corsair CMW256GX4M8E3200C16 32GB
Report a bug
Faster write speed, GB/s
14.4
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMW256GX4M8E3200C16 32GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
55
Read speed, GB/s
16.0
12.3
Write speed, GB/s
12.5
14.4
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2894
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CMW256GX4M8E3200C16 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673FH0-CH9 2GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-2400C16-16GRS 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Samsung M391A2K43BB1-CRC 16GB
Kingston KHX2133C11D3/4GX 4GB
Essencore Limited IM48GU88N24-FFFHA0 8GB
Samsung M3 91T2953GZ3-CF7 1GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Samsung M378B5773CH0-CH9 2GB
Apacer Technology GD2.111881.002 4GB
SK Hynix HYMP512S64CP8-Y5 1GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Corsair CM3X2G1600C9 2GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Kingston 9965600-033.A00G 16GB
Team Group Inc. UD5-6400 16GB
Corsair MK16GX44A2666C16 4GB
AMD AE34G1601U1 4GB
Corsair CMK32GX4M2A2133C13 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Report a bug
×
Bug description
Source link