RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMW32GX4M4C3200C14 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMW32GX4M4C3200C14 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CMW32GX4M4C3200C14 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Corsair CMW32GX4M4C3200C14 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
24
Around -9% lower latency
Faster reading speed, GB/s
20
16
Average value in the tests
Faster write speed, GB/s
16.2
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMW32GX4M4C3200C14 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
22
Read speed, GB/s
16.0
20.0
Write speed, GB/s
12.5
16.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
4006
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CMW32GX4M4C3200C14 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW32GX4M4C3200C14 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
SK Hynix HMA81GU6MFR8N-UH 8GB
Samsung M391B5673EH1-CH9 2GB
Samsung M471A2K43BB1-CRC 16GB
Samsung M471B5674QH0-YK0 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Samsung M393B1K70CH0-YH9 8GB
Kllisre DDR4-8GB 8GB
A-DATA Technology ADOVE1A0834E 1GB
Essencore Limited KD48GU880-26N160T 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-3200C16-16GVK 16GB
Kingston 9905403-011.A03LF 2GB
Kingston ACR32D4U2S8ME-16 16GB
Samsung M471A5244CB0-CWE 4GB
Corsair CM4B8G2J2666A15D 8GB
Kingston 9905471-002.A00LF 2GB
Corsair CMU32GX4M4C3000C15 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Apacer Technology 78.CAGP7.4020B 8GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-2800C18-8GRS 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Report a bug
×
Bug description
Source link