RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology BLS4G4S240FSD.8FBD 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
31
Around 23% lower latency
Faster reading speed, GB/s
16
11
Average value in the tests
Faster write speed, GB/s
12.5
6.6
Average value in the tests
Reasons to consider
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
31
Read speed, GB/s
16.0
11.0
Write speed, GB/s
12.5
6.6
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
1908
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS4G4S240FSD.8FBD 4GB
PNY Electronics PNY 2GB
G Skill Intl F4-2666C18-32GRS 32GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905624-009.A00G 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9905664-010.A00G 4GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston XRGM6C-MIB 16GB
Kingston 9905471-071.A00LF 8GB
G Skill Intl F4-3600C17-8GVK 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Apacer Technology GD2.11173T.001 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMV8GX4M1A2133C15 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
UMAX Technology 16GB
Kingston KHX318C10FR/8G 8GB
Transcend Information TS2GSH64V4B 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
A-DATA Technology DDR4 3600 2OZ 8GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-4000C18-8GTZKW 8GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4500C19-8GTZSWE 8GB
Report a bug
×
Bug description
Source link