RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT4G4SFS824A.M8FE 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology CT4G4SFS824A.M8FE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
83
Around 71% lower latency
Faster reading speed, GB/s
16
15.1
Average value in the tests
Faster write speed, GB/s
12.5
8.3
Average value in the tests
Reasons to consider
Crucial Technology CT4G4SFS824A.M8FE 4GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
83
Read speed, GB/s
16.0
15.1
Write speed, GB/s
12.5
8.3
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
1663
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Apacer Technology 78.CAGPW.40C0B 8GB
Qimonda 64T128020EDL2.5C2 1GB
G Skill Intl F4-2666C16-4GRB 4GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-4266C19-8GTZKW 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston KHX3000C16D4/16GX 16GB
Kingston 9905403-061.A00LF 2GB
Corsair CMR64GX4M8C3200C16 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C15-8GTZKW 8GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Kingston 9905700-053.A00G 8GB
Kingston 99U5474-013.A00LF 2GB
Corsair CMD16GX4M4B3333C16 4GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3200C14-16GTZ 16GB
Samsung M393B1G70BH0-YK0 8GB
Samsung M378A1K43BB2-CTD 8GB
A-DATA Technology AD73I1C1674EV 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMSX16GX4M2A3000C16 8GB
Report a bug
×
Bug description
Source link