RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT8G4DFRA266.C8FJ 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
38
Around 37% lower latency
Faster reading speed, GB/s
16
14.6
Average value in the tests
Faster write speed, GB/s
12.5
12.2
Average value in the tests
Reasons to consider
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Report a bug
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
38
Read speed, GB/s
16.0
14.6
Write speed, GB/s
12.5
12.2
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2915
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB RAM comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVR16N11/8-SP 8GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Samsung M378B5673EH1-CF8 2GB
Samsung M392A4K40BM0-CRC 32GB
SK Hynix HYMP112S64CP6-S6 1GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Kingston 9905625-029.A00G 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMW16GX4M2D3600C16 8GB
Kingston 9905471-002.A00LF 2GB
Gloway International (HK) STK4U2400D15082C 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Kingston KHX2133C11D3/4GX 4GB
SK Hynix GKE160UD102408-2133 16GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-2400C17-8GDBVR 8GB
Kingston KHX2400C11D3/4GX 4GB
Corsair CM4X16GC3000C16K4D 16GB
Samsung M395T2863QZ4-CF76 1GB
Samsung M386A4G40DM1-CRC 32GB
Kingston ACR16D3LS1NGG/2G 2GB
Kingston 9905678-014.A00G 4GB
Report a bug
×
Bug description
Source link