RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2400C14-16GVK 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2400C14-16GVK 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-2400C14-16GVK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-2400C14-16GVK 16GB
Report a bug
Faster reading speed, GB/s
18.1
16
Average value in the tests
Faster write speed, GB/s
13.5
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2400C14-16GVK 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
18.1
Write speed, GB/s
12.5
13.5
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3536
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2400C14-16GVK 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-061.A00LF 2GB
Panram International Corporation L421008G4C1528K34O8A 8
AMD R5316G1609U2K 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX3200C20S4/32GX 32GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C14-8GTZKW 8GB
Mushkin 991586 2GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Samsung M378A1G43DB0-CPB 8GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 99U5700-032.A00G 16GB
PNY Electronics PNY 2GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Mushkin 991679ES 996679ES 2GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
Report a bug
×
Bug description
Source link