RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-16GSXKB 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C16-16GSXKB 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3200C16-16GSXKB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
31
Around 23% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3200C16-16GSXKB 16GB
Report a bug
Faster reading speed, GB/s
18.2
16
Average value in the tests
Faster write speed, GB/s
15.8
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-16GSXKB 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
31
Read speed, GB/s
16.0
18.2
Write speed, GB/s
12.5
15.8
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3672
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3200C16-16GSXKB 16GB RAM comparisons
Kingston 9905403-090.A01LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Strontium EVMT8G1600U86S 8GB
Kingston KGTWW1-MIE 4GB
Corsair CMV4GX3M1B1600C11 4GB
Samsung M391A1G43EB1-CRC 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4000C18-8GVK 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Mushkin 99[2/7/4]192[F/T] 4GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2933C16-16GTZRX 16GB
G Skill Intl F5-5600J4040C16G 16GB
Apacer Technology GD2.22428S.001 8GB
Samsung M471A1K43EB1-CWE 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Kingston ACR16D3LS1NGG/2G 2GB
G Skill Intl F4-3200C15-16GTZKO 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Kingston 99U5471-030.A00LF 8GB
Kingston HP32D4U2S8ME-16 16GB
Crucial Technology CT25664BA160B.C16F 2GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CM4X16GC3000C16K8 16GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9905702-019.A00G 8GB
Avant Technology F641GU67F9333G 8GB
G Skill Intl F4-4000C19-8GTZSW 8GB
Report a bug
×
Bug description
Source link