RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-16GVS 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C16-16GVS 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3200C16-16GVS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
27
Around 11% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3200C16-16GVS 16GB
Report a bug
Faster reading speed, GB/s
17.5
16
Average value in the tests
Faster write speed, GB/s
14.8
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-16GVS 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
27
Read speed, GB/s
16.0
17.5
Write speed, GB/s
12.5
14.8
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3693
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3200C16-16GVS 16GB RAM comparisons
Kingston 9905403-061.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-16GVS 16GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology M471A1K43CB1-CTD 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK4GX4M1A2400C14 4GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMSX8GX4M2A2400C16 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin 99[2/7/4]191[F/T] 4GB
Crucial Technology CT102464BA160B.M16 8GB
Kingston KHX3200C20S4/16G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-2666C19-8GVR 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
Samsung M471B5273EB0-CK0 4GB
Kingston 9905744-067.A00G 32GB
Crucial Technology CT102464BA160B.M16 8GB
Kingston KHX3733C19D4/16GX 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Gloway International (HK) STK4U2400D17082C 8GB
Report a bug
×
Bug description
Source link