RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C16-16GTRS 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-4000C16-16GTRS 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-4000C16-16GTRS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
25
Around 4% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-4000C16-16GTRS 16GB
Report a bug
Faster reading speed, GB/s
18.7
16
Average value in the tests
Faster write speed, GB/s
17.2
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C16-16GTRS 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
25
Read speed, GB/s
16.0
18.7
Write speed, GB/s
12.5
17.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
4039
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-4000C16-16GTRS 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C16-16GTRS 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston KHX3600C17D4/16GX 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Samsung M378B5673FH0-CH9 2GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CB8GS2400.C8JT 8GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-3200C14-8GTZRX 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Samsung M378B1G73EB0-CK0 8GB
A-DATA Technology AD5U48008G-B 8GB
Samsung M391B5673FH0-CH9 2GB
INTENSO 5641152 4GB
Report a bug
×
Bug description
Source link