RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-4000C16-16GTZRA 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-4000C16-16GTZRA 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-4000C16-16GTZRA 16GB
Report a bug
Faster reading speed, GB/s
20.9
16
Average value in the tests
Faster write speed, GB/s
17.4
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
20.9
Write speed, GB/s
12.5
17.4
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3963
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-4000C16-16GTZRA 16GB RAM comparisons
Samsung M378A1K43DB2-CTD 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C16-16GTZRA 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
SK Hynix HMA81GU6DJR8N-WM 8GB
Micron Technology 18HTF12872AY-800F1 1GB
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3200C14-8GTZ 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston HP26D4S9S8HJ-8 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
A-DATA Technology DDR4 4133 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Kingston 9965604-008.C00G 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9905712-048.A00G 16GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
Kingston KHX1600C9S3L/8G 8GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
Corsair CMY8GX3M2A2666C10 4GB
Mushkin 99[2/7/4]199F 8GB
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5624-003.A00G 8GB
Samsung M471B5673FH0-CF8 2GB
Essencore Limited IM44GU48N28-GGGHM 4GB
Report a bug
×
Bug description
Source link